Impurity Doping Effect of Molecular Beam Epitaxial GaAs Films

Impurity Breakdown in GaAs Samples Grown by Molecular Beam Epitaxy

In this work we present studies for the behavior of impurity breakdown of two GaAs samples grown by Molecular Beam Epitaxy at 200oC and 300oC. We vary the temperature and the illumination intensity. For the sample grown at 200oC, the transport mechanism after the breakdown is of the same type of the main free carriers at low electric elds. Below 100K, a clear dependence of the threshold electri...

Molecular beam epitaxial growth of atomically smooth scandium nitride films

High quality scandium nitride films have been grown on magnesium oxide ~001! substrates by molecular beam epitaxy using a rf plasma source for nitrogen. Both reflection high energy electron diffraction and x-ray diffraction confirm that these films have ~001!-orientation. Atomic force microscopy reveals a surface morphology consisting of large plateaus and pyramids. The plateaus are found to be...

Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

Donor-doping characteristics of gas-source molecular beam epitaxial Si and Si1-xGex using phosphine

Well-behaved and reproducible n-type doping of Si and Sir -$e, by phosphine during gas-source molecular beam epitaxy is demonstrated. No significant reduction of growth rate of these materials in the presence of phosphine is recorded in the doping range of 1017-10’9 cmp3 and perfect surface morphologies are observed. The incorporated P atoms are fully activated without ex situ annealing. The do...

Structure of epitaxial Gd2O3 films grown on GaAs„100..

Single-crystal Gd2O3 films were grown epitaxially on GaAs~100! substrate. From the single-crystal momentum space analysis on four different samples, 185, 45, 25, and 18 Å thick, a Mn2O3 isomorphous cubic structure is identified. The Gd2O3 film aligns its twofold ~110! axis with the fourfold ~100! surface normal of the substrate, while aligning its @001# and @ 1̄10# axes with the @011# and @011̄# ...